| PART |
Description |
Maker |
| K4T1G164QD K4T1G084QD |
(K4T1G084QD / K4T1G164QD) 1Gb A-die DDR2 SDRAM Specification
|
Samsung semiconductor
|
| TS1GJF150 |
1GB USB2.0 JetFlash垄芒
1GB USB2.0 JetFlash?
|
Transcend Information. Inc.
Transcend Information. ...
|
| DOM40KV032 HFDOM40KB016 HFDOM40KVXXX |
40Pin Flash Disk Module Min.8MB ~ Max.1GB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.1GB，真正的IDE接口模式3.3 / 5.0V工作
40Pin Flash Disk Module Min.8MB ~ Max.1GB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.1GB，真正的IDE接口模式.3 / 5.0V工作
|
Hanbit Electronics Co., Ltd.
|
| NAND512-M NAND512W3M2 NAND512R4M3 NAND512R4M5 NAND |
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP 同一封装内整合了256/512Mb/1Gb（x8/x16.8/3V28字节页）NAND闪存以及256/512Mb（x16/x32.8V的）LPSDRAM的MCP
|
意法半导
STMicroelectronics N.V.
|
| H5TQ1G83TFR H5TQ1G43TFR |
1Gb DDR3 SDRAM
|
Hynix Semiconductor
|
| TS1GJF130 |
1GB USB2.0 JetFlash
|
Transcend Information. Inc.
|
| QLX111GRX |
11.1Gb/s Lane Extender
|
Intersil Corporation
|
| H5TQ1G63BFR-XXC |
1Gb DDR3 SDRAM
|
Hynix Semiconductor
|
| TS1GJF110 |
1GB USB2.0 JetFlash??10
|
Transcend Information. Inc.
|
| H5TQ1G63DFR-12C H5TQ1G63DFR-N0C H5TQ1G63DFR-11C |
1Gb DDR3 SDRAM
|
Hynix Semiconductor
|
